The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Feb. 26, 2002
Seiji Yaegashi, Yokohama, JP;
Kenji Kotani, Yokohama, JP;
Masaki Yanagisawa, Yokohama, JP;
Hiroshi Yano, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
The present invention relates to a hetero-bipolar transistor. This transistor comprises a semi-insulating InP substrate, a buffer layer on the substrate, a sub-collector layer on the buffer layer, a collector layer on the sub-collector layer, a base layer on the collector layer, a wide-gap emitter layer on the base layer and a emitter contact layer on the emitter layer. The emitter layer extends the emitter contact layer, so the edge of the emitter layer is apart from the emitter contact layer and entirely covers the region where the collector layer and the sub-collector layer are overlapped to each other. According to this configuration, the transistor shows the enhanced reliability and the improved high frequency performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile