The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Feb. 13, 2002
Masatoshi Kanamaru, Miho, JP;
Yoshishige Endo, Tsuchiura, JP;
Atsushi Hosogane, Iwama, JP;
Tatsuya Nagata, Ishioka, JP;
Ryuji Kohno, Chiyoda, JP;
Hideyuki Aoki, Takasaki, JP;
Akihiko Ariga, Musashimurayama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes forming an integrated circuit on a surface of a wafer and testing electric characteristic of the integrated circuit. The testing includes positioning each of probes of a semiconductor testing equipment and each of electrodes of a tested semiconductor element with each other, and allowing each of the probes to come into contact with each of the electrodes. The semiconductor testing equipment includes a first substrate having a cantilever, the probes being formed on the cantilever of the first substrate, and wires for electrically connecting the probes to electrode pads which are formed on an opposite side of the first substrate to a side on which the probes are formed. Each of the wires has a region arranged on an insulating layer, which is formed on the cantilever, on the opposite side.