The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Jun. 08, 1999
Applicant:
Inventors:
Franz Laermer, Stuttgart, DE;
Andrea Schilp, Schwaebisch Gmuend, DE;
Assignee:
Robert Bosch GmbH, Stuttgart, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1308 ;
U.S. Cl.
CPC ...
H01L 2/1308 ;
Abstract
A method of anisotropic etching of silicon with structures, preferably defined with an etching mask, by using a plasma, with a polymer being applied during a polymerization step to the lateral border of the structures defined by the etching mask, then being partially removed again during the following etching step and being redeposited in deeper side walls of the structure newly formed due to the etching reaction, and the etching is performed with an etching gas containing 3 to 40 vol % oxygen. In this way it is possible to prevent sulfur contamination in the exhaust gas area in high rate etching of silicon.