The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Dec. 13, 2000
Applicant:
Inventors:
Satoru Tanaka, Miyanomori, Chuo-ku, Sapporo-shi, Hokkaido 064-0951, JP;
Misaichi Takeuchi, Fujimi, JP;
Yoshinobu Aoyagi, Wako, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/502 ; C30B 2/938 ;
U.S. Cl.
CPC ...
C30B 2/502 ; C30B 2/938 ;
Abstract
A method for the formation of a semiconductor layer by which a defect density of structural defects, particularly a dislocation density of threading dislocations in the resulting semiconductor layer can be remarkably reduced, so that hours of work can be shortened as well as a manufacturing cost can be reduced without requiring any complicated process comprises supplying a structural defect suppressing material for suppressing structural defects in the semiconductor layer onto a surface of the layer of a material from which the semiconductor layer is to be formed.