The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Jan. 22, 1999
Indrajit Banerjee, San Jose, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An amorphous fluorocarbon material useful as a thin film low-k dielectric layer is disclosed. This film is deposited in a high density plasma reactor, preferably an electron cyclotron resonance reactor, using helium as the plasma gas. Substituting helium for argon as the plasma gas results in the thin film layer having a number of desirable qualities, including a high hardness, a high modulus, and high thermal stability. These qualities make the film especially useful as an interlayer dielectric material in integrated circuit manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile