The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2003

Filed:

Feb. 21, 2001
Applicant:
Inventors:

Srdjan Kordic, Bernin, FR;

Joaquin Torres, St. Martin Le Vinoux, FR;

Pascale Motte, La Tour du Pin, FR;

Brigitte Descouts, Meylan, FR;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract

A process produces at a predetermined metallization level at least one metal track ( ) within an intertrack dielectric material ( ). The process includes the steps of etching the intertrack dielectric material ( ) so as to form a cavity ( ) at the position of the track, depositing a conducting barrier layer ( ) in the cavity ( ), filling the cavity ( ) with copper, and depositing a silicon nitride layer ( ) on the predetermined metallization level. Between the barrier layer deposition step and the copper filling step, titanium is deposited on at least part of the barrier layer. This titanium will be transformed into TiSi ( ) during the diffusion of the silicon from the silicon nitride layer ( ).


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