The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2003

Filed:

Mar. 02, 2001
Applicant:
Inventors:

Katsuhiro Imai, Nagoya, JP;

Akihiko Honda, Nagoya, JP;

Minoru Imaeda, Nagoya, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 1/508 ;
U.S. Cl.
CPC ...
C30B 1/508 ;
Abstract

A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible . A fibrous seed crystal is contacted to a melt , and then the melt is pulled down from an opening of the crucible by lowering the seed crystal. A shoulder portion A is produced following the seed crystal, and a planar body B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.


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