The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2003

Filed:

Oct. 26, 1999
Applicant:
Inventors:

Ming-Kwei Lee, Kaohsiung, TW;

Hsin-Chih Liao, Kaohsiung Hsien, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract

This invention disclose a method for growing a barium titanate layer by means of liquid phase deposition (LPD), which characterizes by low cost, low-temperature growth, and easily practice. This novel method for growing a barium titanate characterizes by mixing a barium nitrate solution and hexafluorotitanic acid solution to produce a barium titanate solution. Next, a boric acid solution is added to the barium titanate solution to prepare a barium titanate growth solution. Then a substrate, such as a wafer, ready to grow a barium titanate layer thereon is dipped in this growth solution for a period of time at a suitable temperature. Thereafter, a barium titanate dielectric layer with the properties of high dielectric constant, low leakage current and breakdown resistant can be formed on the substrate.


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