The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Sep. 29, 2000
Donald F. Canaperi, Bridgewater, CT (US);
Jack Oon Chu, Manhasset Hills, NY (US);
Christopher P. D'Emic, Ossining, NY (US);
Lijuan Huang, Tarrytown, NY (US);
John Albrecht Ott, Greenwood Lake, NY (US);
Hon-Sum Philip Wong, Chappaqua, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si Ge layers on a semiconductor substrate, implanting hydrogen into a selected Si Ge layer to form a hydrogen-rich defective layer, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and separating two substrates at the hydrogen-rich defective layer. The separated substrates may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si Ge , and strained Si Ge depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si Ge C.