The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Apr. 25, 2002
Christoph A. Wasshuber, Parker, TX (US);
Zhihao Chen, Plano, TX (US);
Freidoon Mehrad, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Methods are disclosed for the formation of isolation structures and trenches in semiconductor devices, in which lower corners of an isolation trench are rounded after trench formation using an oxidation process which oxidizes substrate material from the trench sidewalls and bottom faster than from the lower corners of the trench. The oxide formed during the rounding process is then removed prior to performing other etch processes, to expose substrate material having rounded lower corners. Thereafter, a liner is formed and the trench is filled with dielectric material to complete the isolation structure.