The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Sep. 28, 2000
Applicant:
Inventor:
Manny Ma, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/1331 ; H01L 2/144 ;
Abstract
A method of fabricating bipolar junction transistors particularly suitable for electrostatic discharge protection and high voltage MOSFETs. In accordance with the invention, a mask covers bird's beaks formed between field oxide layers and doped regions of a semiconductor substrate. A silicide layer is then added to the exposed surface of the doped regions. The mask prevents the silicide layer from overlying the bird's beaks, thereby precluding the silicide layer from degrading the breakdown junction voltage of the transistor.