The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Dec. 19, 2000
Hyundai Electronics Industries Co., Ltd., Ichon-Shi, KR;
Abstract
A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. An aluminum oxide (Al O ) layer is deposited on top of the semiconductor substrate and then, silicon ions plasma doping is carried out. Thereafter, the Al O layer doped with silicon ions is annealed in the presence of oxygen gas or nitrous oxygen to remove a metallic vacancy in the Al O layer. Subsequently, a conductive layer is formed on top of the Al O layer. Finally, the conductive layer is patterned into the gate structure.
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