The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2003

Filed:

Jul. 11, 2001
Applicant:
Inventors:

Shintaro Yamamichi, Tokyo, JP;

Toru Mori, Tokyo, JP;

Akinobu Shibuya, Tokyo, JP;

Takao Yamazaki, Tokyo, JP;

Yuzo Shimada, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract

A semiconductor device provided with a thin film capacitor having a small equivalent series inductance is provided, which can be operated at a high frequency range and contributes to size reduction of the electronic devices. The semiconductor device comprises a device formed on a silicon substrate , interlayer insulating films , and , wiring blocks including a power source wire block and a ground wire block, and a thin film capacitor formed on an uppermost insulating layer. The thin film capacitor comprises a lower electrode connected to the ground wire block through a contact , an upper electrode which is connected to the power source wire block through a contact , and which extends above the lower electrode , and a dielectric layer which is inserted between the lower and the upper electrodes.


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