The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Oct. 06, 2000
Katsuhiko Murakami, Sagamihara, JP;
Yutaka Ichihara, Yokohama, JP;
Nikon Corporation, Tokyo, JP;
Abstract
Microlithography apparatus and methods are disclosed for achieving high-resolution pattern transfer of a pattern onto a substrate, such as a semiconductor wafer, using extreme ultraviolet (EUV, also termed soft X-ray) radiation. The apparatus include an imaging-optical system (projection-optical system) capable of receiving pattern-encoding EUV light from a mask and forming an image of the pattern on the substrate. The desired wavelength of the EUV light is 20 nm to 50 nm, and the imaging-optical system includes multiple reflective mirrors having aspherical surficial profiles and multilayer-film reflective surfaces. The apparatus are configured especially to achieve a pattern-element resolution, of the projected image, of 70 nm or finer.