The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Mar. 20, 2000
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/348 ;
Abstract
A semiconductor device having a highly resistant metal film and a method of producing such a semiconductor device, which includes a metal film formed on an electrode pad, and a protection film formed in an area where he metal film does not exist. The metal film has a greater thickness on its peripheral end portion in contact with the protection film. The semiconductor device can be produced by a semiconductor production method including the steps of activating the surface o the electrode pad with a chelating solution containing glycine and a compound having a metallic element as nuclei, and forming a metal film by electroless metal plating.