The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
May. 08, 2001
Applicant:
Inventors:
Geunbae Lim, Suwon, KR;
Yukeun Eugene Pak, Seongnam, KR;
Jong Up Jeon, Suwon, KR;
Hyunjung Shin, Seongnam, KR;
Young Kuk, Seoul, KR;
Assignee:
Samsung Electronics Co., LTD, Suwon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7148 ;
U.S. Cl.
CPC ...
H01L 2/7148 ;
Abstract
A probe of a scanning probe microscope (SPM) having a field-effect transistor (FET) structure at the tip of the probe, and a method of fabricating the probe are provided. The SPM prove having a source, channel and drain is formed by etching a single crystalline silicon substrate into a V-shaped groove and doping the etching sloping sides at one end of the V-shaped groove with impurities.
Lim, Geunbae. (2003). Scanning probe microscope (spm) probe having field effect transistor channel and method of fabricating the same (U.S. Patent No. 6521921). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6521921
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile