The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Jul. 19, 2001
Applicant:
Inventors:
Gregory N. Parsons, Raleigh, NC (US);
James J. Chambers, Plano, TX (US);
M. Jason Kelly, Raleigh, NC (US);
Assignee:
North Carolina State University, Raleigh, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/904 ; H01L 3/1036 ; H01L 3/10376 ; H01L 3/120 ;
U.S. Cl.
CPC ...
H01L 2/904 ; H01L 3/1036 ; H01L 3/10376 ; H01L 3/120 ;
Abstract
A method of forming an insulation layer on a semiconductor substrate includes modifying a surface of a semiconductor substrate with a metal or a metal-containing compound and oxygen to form an insulation layer on the surface of the semiconductor substrate, wherein the insulation layer comprises the metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises metal-oxygen-silicon bonds.