The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Dec. 05, 2001
Applicant:
Inventors:
Yen-Chang Chen, Tai-Nan, TW;
Chih-Hung Lin, Hsin-Chu, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1332 ;
U.S. Cl.
CPC ...
H01L 2/1332 ;
Abstract
A semiconductor substrate has at least one active area and a STI surrounding the active area. An N-well and an adjacent P-well are formed in the active area. A dummy gate is formed atop the border between the N-well and the P-well, while simultaneously forming gates for other MOS transistors on the semiconductor substrate. A spacer is formed on the periphery of each gate. Finally, an N-type ion implantation process and a P-type ion implantation process are performed to form a cathode and an anode for the silicon controlled rectifier device in the P-well and the N-well between the STI and the dummy gate.