The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2003

Filed:

Jul. 23, 2001
Applicant:
Inventors:

Noriaki Tani, Chiba, JP;

Kazuhiko Saito, Shizuoka, JP;

Koukou Suu, Chiba, JP;

Assignee:

Ulvac, Inc., Chigasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/434 ;
U.S. Cl.
CPC ...
C23C 1/434 ;
Abstract

In order to provide technology where film deposition speed and Sr/Ti composition ratio is constant even when forming dielectric films consecutively on a plurality of substrates using sputtering techniques, a sputtering apparatus is provided with an opposing electrode located about the periphery of a mounting table at an inner bottom surface of a vacuum chamber. Further, a multiplicity of holes are formed at the surface of the opposing electrode so that the surface area of the opposing electrode is large. Sputtering dielectric material becomes affixed to the surface of the opposing electrode so that a dielectric film is formed at this surface. The charge density of charge distributed at the surface of the opposing electrode is therefore small compared with the related art even when positive charge is distributed. The potential of the opposing electrode surface can therefore be kept substantially at earth potential.


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