The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Jun. 06, 2001
Jaroslav Hynecek, Richardson, TX (US);
Isetex, Inc., Allen, TX (US);
Abstract
A new High Dynamic Range charge detection concept useful for CCD and Active Pixel CMOS image sensors uses at least one transistor operating in a punch through mode for the charge detection node reset. The punch through operation significantly reduces the reset feed through which leads to a higher voltage swing available on the node for the signal. This in turn allows building smaller and thus more sensitive charge detection nodes. The undesirabe artifacts, associated with the incomplete reset that are induced by the punch through operation, are completely removed by incorporating the CDS signal processing method into the signal processing chain. The incomplete reset artifact removal by the CDS technique is extended to all other resetting concepts that are modeled by a large reset time constant. The punch through concept is suitable for resetting Floating Diffusion charge detection nodes as well as Floating Gate charge detection nodes.