The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Sep. 25, 2001
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The present invention provides a method of manufacturing a semiconductor device that reduces pitch dependence which represents a characteristic that the hole diameter decreases with increasing hole pitch. In the surface of a resist ( ) where holes ( ) having pitch dependence are formed, Ar ions of an inert gas are vertically implanted, for example, at an energy of 50 keV at a dose of 5.0×10 cm . The ion implantation in the resist ( ) shrinks the resist ( ) and increases the hole diameters of the holes ( ). At this time, since the hole diameters of the holes ( ) of small hole pitches increase by a smaller amount than the hole diameter of the hole ( ) of a great hole pitch, the pitch dependence of the holes ( ) can be reduced.