The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Feb. 15, 2001
Takashi Kawanoue, Yokohama, JP;
Junichi Wada, Yokohama, JP;
Tetsuo Matsuda, Tano-gun, JP;
Hisashi Kaneko, Fujisawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device is formed by a compound film &agr;&ggr; made of at least one element &agr; selected from metal elements and at least one element &ggr; selected from the group consisting of boron, carbon, and nitrogen on a base layer containing oxygen (O), and forming a compound film &agr;&ggr; O by causing the compound film &agr;&ggr; to reduce the base layer and thereby oxidizing the compound film &agr;&ggr; on an interface of the compound film &agr;&ggr; and the base layer, wherein each of x and y is a ratio of the number of atoms of the element &ggr; to the number of atoms of the element &agr;, and z is a ratio of the number of atoms of the oxygen to the number of atoms of the element &agr;.