The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Dec. 22, 2000
Applicant:
Inventors:
Rao Annapragada, Union City, CA (US);
Reza Sadjadi, Saratoga, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/1302 ;
Abstract
A method of etching a stack is provided. Generally, a trench patterned resist layer is placed over a dielectric layer of the stack. A trench is partially etched into the dielectric layer. A simultaneous stripping of the trench patterned resist layer, etching the barrier layer, and etching the trench is then performed. As a result an etch stack may be provided with less damage. The method may be used to provide a dual damascene structure. The dual damascene structure may be provided by etching a via before placing the trench patterned resist layer over the dielectric layer of the stack.