The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Jul. 27, 2001
Gee-won Nam, Kyoungsangbuk-do, KR;
Gi-jong Park, Kyungki-do, KR;
Hong-kyu Hwang, Kyungki-do, KR;
Jun-shik Bae, Seoul, KR;
Young-rae Park, Kyungki-do, KR;
Jung-yup Kim, Seoul, KR;
Bo-un Yoon, Seoul, KR;
Sang-rok Hah, Seoul, KR;
Abstract
An insulating layer can be formed on first and second adjacent regions of an integrated circuit having a first step difference therebetween, the first and second regions having first and second respective etch rates associated therewith. A recess can be formed in the insulating layer on the second region having a second step difference with the first region that is less than the first step difference to provide a portion of the insulating layer between the first and second adjacent regions having a third step difference with the first region that is greater than the second step difference. A width of the portion is selected based on a difference between the first and second etch rates.