The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Mar. 16, 2001
Isao Kidoguchi, Hyogo, JP;
Akihiko Ishibashi, Osaka, JP;
Masahiro Kume, Shiga, JP;
Yuzaburo Ban, Osaka, JP;
Satoshi Kamiyama, Hyogo, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
First, the substrate temperature is set to 1020° C., and an n-type cladding layer ( ) made of n-type Al Ga N, an n-type optical guide layer ( ) made of n-type GaN, and a flatness maintenance layer ( ) made of n-type Al Ga N for maintaining the surface flatness of the n-type optical guide layer ( ) by suppressing re-evaporation of the constituent atoms of the n-type optical guide layer ( ), are grown in this order on a substrate ( ) made of sapphire. Then, the supply of a group III material gas is stopped, the substrate temperature is decreased to 780° C., and the carrier gas is switched from a hydrogen gas to a nitrogen gas. Then, an active layer ( ) having a multiple quantum well structure is grown by introducing NH as a group V source and selectively introducing TMI and TMG as a group III source.