The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Mar. 28, 2002
Mark A. Durlam, Chandler, AZ (US);
Mark F. Deherrera, Tempe, AZ (US);
Kelly W. Kyler, Mesa, AZ (US);
Brian R. Butcher, Gilbert, AZ (US);
Gregory W. Grynkewich, Gilbert, AZ (US);
Steven M. Smith, Gilbert, AZ (US);
Charles Snyder, Gilbert, AZ (US);
Jon M. Slaughter, Tempe, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of fabricating a MRAM device with a taper comprising the steps of providing a substrate, forming a dielectric region with positioned on the substrate, patterning and isotropically etching through the dielectric region to the substrate to form a trench, depositing the MRAM device within the trench wherein the MRAM device includes a first ferromagnetic region with a width positioned on the substrate, a non-ferromagnetic spacer layer with a width positioned on the first ferromagnetic region, and a second ferromagnetic region with a width positioned on the non-ferromagnetic spacer layer wherein the taper is formed by making the width of the first ferromagnetic region greater than the width of the non-ferromagnetic spacer layer, and the width of the non-ferromagnetic spacer layer greater than the width of the second ferromagnetic region so that the first ferromagnetic region is separated from the second ferromagnetic region.