The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2003

Filed:

Feb. 26, 1999
Applicant:
Inventor:

James Malden Chapman, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1306 ;
U.S. Cl.
CPC ...
H01L 2/1306 ;
Abstract

A system detects the clearing of a dielectric at a plurality of contact sites by measuring the surface voltage of the dielectric and comparing the surface voltage to a reference voltage set to a value that relates to the cleared contact sites. Another system detects the clearing of a dielectric at a plurality of contact sites on a substrate by measuring the rate of change of a substrate current during an etch process and ending the etch process when the rate of change is approximately zero. Another system detects the clearing of a dielectric at a contact site by measuring a substrate current during an etch process and ends the etch process when the measured substrate current exceeds a predetermined value.


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