The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6514850 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 04, 2003

Filed:

Jan. 31, 2001
Applicant:
Inventors:

Li-Qun Xia, Santa Clara, CA (US);

Huong Thanh Nguyen, San Ramon, CA (US);

Ellie Yieh, San Jose, CA (US);

Dan Maydan, Los Altos Hills, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

Methods of forming an interface in a dielectric material to act as an indicator for terminating an etching process, and products produced thereby.


Find Patent Forward Citations

Xia, Li-Qun. (2003). Interface with dielectric layer and method of making (U.S. Patent No. 6514850). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6514850

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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