The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Sep. 22, 2000
Emi Ishida, Sunnyvale, CA (US);
Che-Hoo Ng, San Martin, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Semiconductor devices comprising a plurality of active device regions formed in a common semiconductor substrate, e.g., CMOS devices, are formed by utilizing shallow trench isolation (STI) technology enhanced by selectively implanting the bottom surface of the trench with dopant diffusion inhibiting ions prior to filling the trench with a dielectric material and formation of opposite conductivity type well regions on either side of the trench. The inventive methodology effectively reduces or substantially eliminates deleterious counterdoping of the subsequently formed well regions resulting from thermally-induced lateral inter-diffusion of p-type and/or n-type dopant impurities used for forming the well regions.