The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Jun. 09, 2000
An-Min Chiang, Hsin-Chu, TW;
Chi-Hsiang Lee, Hua-Lien, TW;
Wei-Kun Yeh, Hsin-Chu, TW;
Hua-Yu Yang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method of forming an image sensor is disclosed. A partially processed semiconductor wafer is provide, containing p-type and/or n-type regions which are bounded by isolation regions and with gate oxide layers grown on the surfaces upon which gate electrode structures are disposed, some of said gate electrode structures will serve as gate electrodes of image sensor transistors. Ions are implanted to form source/drain structures about the said gate electrode structures. To form photodiodes ions are implanted in two steps overlapping a source/drain region. A deeper implant provides a low charge carrier density region and a shallow implant provides a high charge carrier density region near the surface. A blanket transparent insulating layer is deposited.