The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Mar. 31, 1998
Takeshi Asamura, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
The present invention provides a semiconductor integrated circuit having excellent junction characteristics when applying the silicide technology to an extremely narrowed diffusion layer between adjacent gate electrodes as well as a method for manufacturing the same. To attain this object, a configuration of the invention has electrode layers formed on a semiconductor substrate, sidewall layers formed on the side walls of electrode layers, and high-melting point metal silicide layers formed on the electrode layers, wherein the sidewall layers are connected together. This makes it possible to eliminate abnormal growth during silicide formation because of the fact that the region defined between the electrode layers on the substrate is covered by the sidewall layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile