The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Mar. 26, 2001
Richard Mlcak, Cambridge, MA (US);
Boston MicroSystems, Inc., Woburn, MA (US);
Abstract
A method of electrochemically etching a device, including forming a semiconductor substrate having a p-type semiconductor region on an n-type semiconductor region. A discrete semiconductor region is formed on the p-type semiconductor region and is isolated from the n-type semiconductor region. The n-type semiconductor region is exposed to an electrolyte with an electrical bias applied between the n-type semiconductor region and the electrolyte. The n-type semiconductor region is also exposed to radiation having energy sufficient to excite electron-hole pairs. In addition, a p-n junction reverse bias is applied between the p-type semiconductor region and the n-type semiconductor region to prevent the p-type semiconductor region and the discrete semiconductor region from etching while portions of the n-type semiconductor region exposed to the electrolyte and the radiation are etched.