The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Jun. 25, 2001
Douglas A. Buchanan, Cortlandt Manor, NY (US);
Alessandro C. Callegari, Yorktown Heights, NY (US);
Michael A. Gribelyuk, Poughquag, NY (US);
Paul C. Jamison, Hopewell Junction, NY (US);
Deborah Ann Neumayer, Danbury, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a high-k dielectric material which exhibits a substantially lower amount of trap charge within a gate stack region is provided. The method maintains high-temperatures (250° C. or above) such that the substrate wafer is not cooled during the various processing steps. Such a method leads to the formation of a high-k dielectric material which does not exhibit a hysteric behavior in a capacitance-voltage curve as well as an increased mobility on FETs using conventional CMOS processing.