The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6509279 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 21, 2003

Filed:

Jul. 24, 2001
Applicant:
Inventors:

Yasushi Fujii, Kanagawa, JP;

Atsushi Matsushita, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract

According to the present invention, there is provided a method for processing a coating film comprising the steps of forming a silica group coating film having a low dielectric constant on a substrate, conducting an etching process to the silica group coating film through a resist pattern, processing the silica group coating film with plasma induced from inactive gas such as helium gas or the like. In processing according to this method, the silica group coating film is not damaged when an ashing process is conducted to the resist pattern as a subsequent process, and the low dielectric constant of the coating film can be maintained.


Find Patent Forward Citations

Fujii, Yasushi. (2003). Methods for processing a coating film and for manufacturing a semiconductor element (U.S. Patent No. 6509279). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6509279

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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