The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Oct. 01, 2001
Suguru Tabara, Hamamatsu, JP;
Hiroshi Nakaya, Hamamatsu, JP;
Yamaha Corporation, , JP;
Abstract
After a wiring material layer ( ) which is made of WSi or the like is formed on an insulation film covering a semiconductor substrate ( ), a first antireflection coating film ( ) which is made of TiON or TiN and a second antireflection coating film ( ) which is made of an organic material are sequentially formed on the wiring material layer ( ). Resist patterns ( to ) are formed on the second antireflection coating film ( ) by photolithography. The dry etching of the second antireflection coating film ( ) is performed using the resist patterns ( to ) as masks, after which the dry etching of the first antireflection coating film ( ) is conducted using the resist patterns ( to ) and patterns ( to ) of the second antireflection coating film ( ) as masks. The dry etching of the wiring material layer ( ) is effected using the resist patterns ( to ), the patterns ( to ) of the second antireflection coating film ( ) and patterns ( to ) of the first antireflection coating film ( ) as masks. The resist patterns ( to ) and the patterns ( to ) of the second antireflection coating film ( ) are removed. Lamination layers, each including one of patterns of the wiring material layer ( ) and one of the patterns of the first antireflection coating film ( ), form wiring layers. The resist patterns ( to ) and the patterns of the second antireflection coating film ( ) may be removed after the etching of the first antireflection coating film ( ), and the wring material layer ( ) may be etched using the patterns of the first antireflection coating film ( ) as masks.