The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Mar. 07, 2002
Applicant:
Inventors:
Assignee:
Siliconix incorporated, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
Cesium is implanted into the gate oxide layer of a vertical trench-gated MOSFET. The cesium, which is an electropositive material, reduces the threshold voltage of the device and lowers the on-resistance by improving the accumulation region adjacent the bottom of the trench.
Chang, Mike. (2003). Method of making trench-gated mosfet having cesium gate oxide layer (U.S. Patent No. 6509233). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6509233
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile