The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2003

Filed:

Feb. 18, 1997
Applicant:
Inventor:

Katsumi Sameshima, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G 4/10 ;
U.S. Cl.
CPC ...
H01G 4/10 ;
Abstract

It is an object of the present invention to provide a device having a crystalline oxide layer of complex compound which can form a crystalline thin film with high orientation. The lower electrode comprises tantalum layer , titanate layer and platinum layer , and PZT thin film is formed on the lower electrode . Since titanate layer is formed on the lower electrode , crystallinity of the PZT thin film can be improved. Therefore, the “lift-off” method can be used with to no thermal treatment needed when forming the platinum layer


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