The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Jun. 18, 1996
Applicant:
Inventor:
Joseph C. Sher, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/01 ;
U.S. Cl.
CPC ...
H03K 3/01 ;
Abstract
A method is disclosed wherein the voltage of a semiconducting substrate can be locally pumped to a voltage different than the bulk of the semiconducting substrate generally. The local voltage may be pumped into a localized portion of the bulk substrate, or it may be pumped into a portion of the substrate that is isolated from the bulk substrate. This localized biasing may be used for various purposes, including the adjustment of body effect in a plurality of transistors, adjusting the threshold voltage of a capacitor, and reducing latch-up sensitivity of a transistor circuit.