The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Jul. 07, 2000
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
Disclosed is a copper film selective formation method capable of reducing the material cost by selectively depositing copper in a necessary region of an undercoat film made of an arbitrary material such as a metal or an insulating material. This copper film selective formation method includes the steps of forming a thin film of a silane coupling agent or a surfactant on an undercoat film on a substrate, making a prospective copper film region of the thin film hydrophilic, and selectively forming a copper film in the hydrophilic prospective copper film region of the undercoat film by CVD of copper.