The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Sep. 28, 2001
Applicant:
Inventors:
Takenobu Ikeda, Ome, JP;
Masahiro Tadokoro, Hachioji, JP;
Masaru Izawa, Hino, JP;
Takashi Yunogami, Sagamihara, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A hole is formed on an insulating film made of silicon oxide by selectively plasma-etching the insulating film with an etching gas containing C F , O , and Ar firstly under a condition in which the deposition property of a polymer layer is weak and secondly under a condition in which that of the polymer layer is strong.
Ikeda, Takenobu. (2003). Method of manufacturing a semiconductor integrated circuit device (U.S. Patent No. 6506674). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6506674
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile