The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Apr. 03, 2000
Chai-Der Chang, Hsin-Chu, TW;
Pin-Hsiang Chin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-chu, TW;
Abstract
In accordance with the objectives of the invention a new method is provided for the definition and delineation of active regions in the surface of a semiconductor substrate. A layer of pad oxide is grown on the surface of the substrate, the layer of pad oxide is patterned and etched whereby the pad oxide remains in place over areas where the isolation regions are to be created. The underlying silicon substrate is in this manner exposed; the regions of the silicon substrate that are exposed are the regions of the substrate where active devices are to be created. The exposed surface of the substrate is cleaned; the openings in the layer of pad oxide are selectively filled with a deposition of epitaxial silicon. The created structure is heat treated to improve the interface between the patterned and etched layer of pad oxide and the deposited epitaxial silicon. The created pattern of pad oxide can now be used as regions of field isolation over the surface of the substrate.