The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Feb. 14, 2001
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method and apparatus for manufacturing a semiconductor device having an interlayer insulating film of improved flatness after a CMP process are obtained. The method includes the steps of: heat-treating a semiconductor device having an interlayer insulating film containing impurities; conducting a process for making an impurity-concentration distribution at an upper layer portion of the interlayer insulating film substantially uniform after the heat treatment; and polishing the interlayer insulating film by a CMP process after the process for making the impurity-concentration distribution substantially uniform.