The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Aug. 03, 2001
Applicant:
Inventor:
Shu-Ya Hsu, Yun-Lin, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
The invention utilizes introductions of oxygen and hydroxyl to perform an in situ steam generated process to reoxidize a conventional sidewall oxide layer and density the oxide in a shallow trench isolation. The ISSG process renders the conventional sidewall oxide layer much less stress and encroachment. The electrical property of the active regions and the isolation quality between the active regions can be assured. The ISSG process can densify the oxide in a shallow trench isolation to prevent the oxide from being lost in the following clean process.
Hsu, Shu-Ya. (2003). Method for reducing stress and encroachment of sidewall oxide layer of shallow trench isolation (U.S. Patent No. 6503815). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6503815
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile