The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Aug. 03, 2001
Jon Andrew Preece, Birmingham, GB;
Richard Edward Palmer, Stourbridge, GB;
Alexander Phillip Robinson, Andover, GB;
Toshihiko Kanayama, Ibaraki, JP;
Tetsuya Tada, Ibaraki, JP;
Other;
Abstract
A high resolution patterning method of a resist layer is disclosed by patternwise irradiation of a resist layer with electron beam utilizing a polysubstituted triphenylene compound as the electron beam resist material, which is graphitized and made insoluble in both polar and non-polar organic solvents for electron doses greater than 2×10 C/cm , and which undergoes cleavage of the adduct chains and extensive de-aromatization of the triphenylene core therefore enhancing the solubility in polar solvents only for electron doses between 3×10 and 2×10 C/cm . The thus formed positive or negative tone resist layer is highly resistant against dry etching to ensure the utility of the method in fine patterning work for the manufacture of semiconductor devices.