The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Dec. 07, 2000
Applicant:
Inventors:
Joel Penelon, Monrovia, MD (US);
Ivan Berry, Ellicott City, MD (US);
Assignee:
Axcelis Technologies, Inc., Beverly, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/00 ; H01L 2/100 ; C23C 1/600 ;
U.S. Cl.
CPC ...
H05H 1/00 ; H01L 2/100 ; C23C 1/600 ;
Abstract
A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.