The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2002
Filed:
Jul. 16, 2001
Taizo Oku, Tokyo, JP;
Junichi Aoki, Tokyo, JP;
Youichi Yamamoto, Tokyo, JP;
Takashi Koromokawa, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Other;
Abstract
The present invention relates to a semiconductor device manufacturing method of forming an inter-wiring layer insulating film having a low dielectric constant to cover a copper wiring. In construction, in a semiconductor device manufacturing method of forming an insulating film having a low dielectric constant on a substrate the insulating film is formed by plasmanizing a film forming gas, that consists of at least any one of alkyl compound having siloxane bonds and methylsilane (SiH (CH ) : n=0, 1, 2, 3), any one oxygen-containing gas selected from a group consisting of N O, H O, and CO , and ammonia (NH ) to react.