The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2002
Filed:
Jun. 02, 2000
Sailesh Chittipeddi, Allentown, PA (US);
Arun Kumar Nanda, Orlando, FL (US);
Ankineedu Velaga, Orlando, FL (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
A method for forming shallow trench isolation structures produces a shallow trench isolation structure having a substantially planar upper surface. The shallow trench isolation structure is formed from an originally formed shallow trench isolation structure which includes a deposited dielectric material within a trench and which exhibits dishing related problems in the form of a void formed within the trench, wherein the surface of the deposited dielectric material is recessed below the planar upper surface. The method provides for filling the void with a silicon film. The silicon film is then polished in its as-deposited or oxidized form, to produce a shallow trench isolation structure having a planar upper surface.