The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2002
Filed:
Aug. 15, 2000
Ryuji Okamura, Souraku-gun, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A film-forming method and apparatus by high frequency plasma CVD, characterized by using a specific high frequency power introduction means comprising at least an electrode for introducing a high frequency power into a deposition chamber containing a substrate therein and an insulating member which covers the electrode such that the surface of the electrode is isolated from glow discharge caused in the deposition chamber, the electrode being provided with a plurality of gas ejection holes for ejecting gas against an inner face of the insulating member, wherein the formation of a deposited film on the substrate in the deposition chamber is conducted while ejecting gas (inert gas or hydrogen gas) from the gas ejection holes of the electrode against the inner face of the insulating member.