The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2002
Filed:
Jun. 18, 2001
Stewart Edward Hooper, Kidlington Oxon, GB;
Jonathan Heffernan, Oxford, GB;
Jennifer Mary Barnes, Middlesex, GB;
Alistair Henderson Kean, Oxfordshire, GB;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
This invention relates to a method of growing a nitride semiconductor layer by molecular beam epitaxy comprising the steps of: a) heating a GaN substrate (S) disposed in a growth chamber ( ) to a substrate temperature of at least 850° C.; and b) growing a nitride semiconductor layer on the GaN substrate by molecular beam epitaxy at a substrate temperature of at least 850° C., ammonia gas being supplied to the growth chamber ( ) during the growth of the nitride semiconductor layer; wherein the method comprises the further step of commencing the supply ammonia gas to the growth chamber during step (a), before the substrate temperature has reached 800° C.