The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Oct. 29, 1999
Kazuhiro Eguchi, Chigasaki, JP;
Katsuya Okumura, Yokohama, JP;
Masahiro Kiyotoshi, Sagamihara, JP;
Katsuhiko Hieda, Yokohama, JP;
Soichi Yamazaki, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Presented is an etching method capable of easily etching an oxide containing an alkaline-earth metal. One method is to etch the oxide by using an etching gas containing a halogen gas except for fluorine, an interhalogen compound consisting of only a halogen element except for fluorine, or a halogen hydride consisting of a halogen element except for fluorine and hydrogen. Particularly chlorides, bromides, and iodides of alkaline-earth metals have relatively high vapor pressures, so a thin film containing an alkaline-earth metal can be etched by using chlorine gas, bromine gas, or iodine gas. When a halogen gas containing fluorine is used, damages to SiO portions used in a film formation apparatus are prevented by coating these SiO portions with a fluoride of an alkaline-earth metal.